j/sst270 series vishay siliconix document number: 70258 s-04233?rev. d, 02-jul-01 www.vishay.com 8-1 p-channel jfets j270 sst270 j271 sst271
part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j/sst270 0.5 to 2.0 30 6 ?2 j/sst271 1.5 to 4.5 30 8 ?6
low cutoff voltage: j270 <2 v high input impedance very low noise high gain full performance from low-voltage power supply: down to 2 v low signal loss/system error high system sensitivity high-quality, low-level signal amplification high-gain, low-noise amplifiers low-current, low-voltage battery amplifiers ultrahigh input impedance pre-amplifiers high-side switching the j/sst270 series consists of all-purpose amplifiers for designs requiring p-channel operation. the to-226aa (to-92) plastic package provides a low-cost option, while the to-236 (sot-23) package provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). d s g to-236 (sot-23) top view 2 3 1 to-226aa (to-92) top view d s g 1 2 3 *marking code for to-236 sst270 (s0)* sst271 (s1)* j270 j271
gate-drain voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-source voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current ?50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
j/sst270 series vishay siliconix www.vishay.com 8-2 document number: 70258 s-04233 ? rev. d, 02-jul-01
limits j/sst270 j/sst271 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 45 30 30 gate-source cutoff voltage v gs(off) v ds = ? 15 v, i d = ? 1 na 0.5 2.0 1.5 4.5 v saturation drain current b i dss v ds = ? 15 v, v gs = 0 v ? 2 ? 15 ? 6 ? 50 ma v gs = 20 v, v ds = 0 v 10 200 200 pa gate reverse current i gss t a = 125 c 5 na gate operating current i g v dg = ? 15 v, i d = ? 1 ma 10 drain cutoff current i d(off) v ds = ? 15 v, v gs = 10 v ? 10 pa gate-source forward voltage v gs(f) i g = ? 1 ma , v ds = 0 v ? 0.7 v dynamic common-source forward transconductance g fs v ds = ? 15 v, v gs = 0 v 6 15 8 18 ms common-source output conductance g os v ds = ? 15 v, v gs = 0 v f = 1 khz 200 500 s common-source input capacitance c iss 20 common-source reverse transfer capacitance c rss v ds = ? 15 v, v gs = 0 v f = 1 mhz 4 pf equivalent input noise voltage e n v dg = ? 10 v, v gs = 0 v f = 1 khz 20 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. pscia b. pulse test: pw 300 s duty cycle 3%. 200 06810 4 2 160 0 ? 100 ? 80 ? 60 ? 40 ? 20 0 on-resistance and drain current vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = ? 1 ma, v gs = 0 v i dss @ v ds = ? 15 v, v gs = 0 v i dss r ds 120 80 40 18 0 15 12 9 6 3 6810 2 250 200 150 100 50 0 forward transconductance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) g fs and g os @ v ds = ? 15 v v gs = 0 v, f = 1 khz g fs g os 4 r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma) g os ? output conductance ( s) g fs ? forward transconductance (ms)
j/sst270 series vishay siliconix document number: 70258 s-04233 ? rev. d, 02-jul-01 www.vishay.com 8-3 2.0 v output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 0.6 v 0.8 v ? 2 0 ? 0.6 ? 0.8 ? 1 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 ? 0.4 ? 0.2 v gs(off) = 1.5 v v gs = 0 v 0.4 v output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.0 v 1.5 v 2.0 v ? 2 0 ? 0.3 ? 0.4 ? 0.5 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 ? 0.2 ? 0.1 v gs(off) = 3 v v gs = 0 v output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.5 v 0.5 v ? 25 0 ? 12 ? 16 ? 20 ? 20 ? 15 ? 10 ? 5 0 ? 8 ? 4 v gs(off) = 3 v v gs = 0 v 1.0 v 0 0 0.2 0.4 0.6 0.8 1.0 ? 2 ? 4 ? 6 ? 8 ? 10 v gs ? gate-source voltage (v) t a = ? 55 c 125 c ? drain current (ma) i d transfer characteristics 0 012345 ? 8 ? 16 ? 24 ? 32 ? 40 transfer characteristics t a = ? 55 c 125 c v gs ? gate-source voltage (v) ? drain current (ma) i d capacitance vs. gate-source voltage capacitance (pf) v gs ? gate-source voltage (v) v ds = 0 v f = 1 mhz c iss c rss 30 01216 820 24 12 6 0 18 4 0.2 v 0.5 v 25 c v ds = ? 15 v v gs(off) = 1.5 v 25 c v ds = ? 15 v v gs(off) = 3 v
j/sst270 series vishay siliconix www.vishay.com 8-4 document number: 70258 s-04233 ? rev. d, 02-jul-01 250 200 150 100 50 0 ? 1 ? 10 ? 100 on-resistance vs. drain current i d ? drain current (ma) t a = 25 c v gs(off) = 1.5 v 3 v 5 v 300 ? 55 25 125 0 ? 15 85 on-resistance vs. temperature t a ? temperature ( c) v gs(off) = 1.5 v 3 v 5 v i d = ? 1 ma r ds changes x 0.7%/ c 240 180 120 60 ? 35 5 45 65 105 gate leakage current v dg ? drain-gate voltage (v) t a = 125 c t a = 25 c ? 10 ma 10 na 100 pa 100 na 1 na ? gate leakage i g 10 pa 1 pa 0.1 pa 0 ? 40 ? 20 ? 10 ? 50 ? 30 i gss @ 125 c i gss @ 25 c i d = ? 10 ma 10 100 1 k 100 k 10 k 100 10 1 noise voltage vs. frequency f ? frequency (hz) v ds = ? 10 v i d = ? 0.1 ma ? 1 ma transconductance vs. drain current output conductance vs. drain current ? 0.1 ? 1 ? 10 100 10 1 t a = ? 55 c 125 c i d ? drain current (ma) i d ? drain current (ma) ? 0.1 ? 1 ? 10 100 10 1 t a = ? 55 c 125 c 25 c v ds = ? 15 v f = khz v gs(off) = 3 v v gs(off) = 3 v v ds = ? 15 v f = khz 25 c ? 1 ma ? 1 ma g fs ? forward transconductance (ms) g os ? output conductance ( s) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) e n ? noise voltage nv / hz
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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